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HY57V561620B(L)T-I
4 Banks x 4M x 16Bit Synchronous DRAM
DESCRIPTION
The HY57V561620B-I is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B-I is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL. Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined design is not restricted by a 2N rule.)
FEATURES
* * * Single 3.30.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM Internal four banks operation * * * * * Auto refresh and self refresh 8192 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst * - 1, 2, 4 or 8 for Interleave Burst Programmable CAS Latency ; 2, 3 Clocks Ambient Temperature : - 40 ~ 85 C
* *
ORDERING INFORMATION
Part No.
HY57V561620BT-6I HY57V561620BT-KI HY57V561620BT-HI HY57V561620BT-8I HY57V561620BT-PI HY57V561620BT-SI HY57V561620BLT-6I HY57V561620BLT-KI HY57V561620BLT-HI HY57V561620BLT-8I HY57V561620BLT-PI HY57V561620BLT-SI
Clock Frequency
166MHz 133MHz 133MHz 125MHz 100MHz 100MHz 166MHz 133MHz 133MHz 125MHz 100MHz 100MHz
Power
Organization
Interface
Package
Normal
4Banks x 4Mbits x16
LVTTL
400mil 54pin TSOP II
Low power
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.1.3 / Apr. 2003 1
HY57V561620B(L)T-I
PIN CONFIGURATION
VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 VDD LDQM /WE /CAS /RAS /CS BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 VSS DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 VSS NC UDQM CLK CKE A12 A11 A9 A8 A7 A6 A5 A4 VSS
54pin TSOP II 400mil x 875mil 0.8mm pin pitch
PIN DESCRIPTION
PIN CLK CKE CS BA0, BA1 A0 ~ A12 Clock Clock Enable Chip Select Bank Address Address Row Address Strobe, Column Address Strobe, Write Enable Data Input/Output Mask Data Input/Output Power Supply/Ground Data Output Power/Ground No Connection PIN NAME DESCRIPTION The system clock input. All other inputs are registered to the SDRAM on the rising edge of CLK Controls internal clock signal and when deactivated, the SDRAM will be one of the states among power down, suspend or self refresh Enables or disables all inputs except CLK, CKE, UDQM and LDQM Selects bank to be activated during RAS activity Selects bank to be read/written during CAS activity Row Address : RA0 ~ RA12, Column Address : CA0 ~ CA8 Auto-precharge flag : A10 RAS, CAS and WE define the operation Refer function truth table for details Controls output buffers in read mode and masks input data in write mode Multiplexed data input / output pin Power supply for internal circuits and input buffers Power supply for output buffers No connection
RAS, CAS, WE UDQM, LDQM DQ0 ~ DQ15 VDD/VSS VDDQ/VSSQ NC
Rev.1.3 / Apr. 2003
2
HY57V561620B(L)T-I
FUNCTIONAL BLOCK DIAGRAM
4Mbit x 4banks x 16 I/O Synchronous DRAM
Self Refresh Logic & Timer
Internal Row Counter
CLK
Row Active
4Mx16 Bank 3 Row Pre Decoders 4Mx16 Bank 2 X decoders 4Mx16 Bank 1 X decoders 4Mx16 Bank 0 DQ0 DQ1 I/O Buffer & Logic Sense AMP & I/O Gate
CKE CS RAS CAS WE UDQM LDQM
State Machine
Column Active
X decoders
Memory Cell Array
Column Pre Decoders Y decoders
DQ14 DQ15
Bank Select
Column Add Counter
A0 A1 Address buffers A12 BA0 BA1
Address Register Burst Counter
Mode Registers
CAS Latency
Data Out Control
Pipe Line Control
Rev.1.3 / Apr. 2003
3
HY57V561620B(L)T-I
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Rating Unit C C
Ambient Temperature Storage Temperature Voltage on Any Pin relative to VSS Voltage on VDD relative to VSS Short Circuit Output Current Power Dissipation Soldering Temperature Time
TA TSTG VIN, VOUT VDD, VDDQ IOS PD TSOLDER
-40~85 -55 ~ 125 -1.0 ~ 4.6 -1.0 ~ 4.6 50 1 260 10
V V mA W
C Sec
Note : Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITION (TA=-40C ~ 85C)
Parameter Symbol Min Typ. Max Unit Note
Power Supply Voltage Input High Voltage Input Low Voltage
VDD, VDDQ VIH VIL
3.0 2.0 - 0.3
3.3 3.0 0
3.6 VDD + 0.3 0.8
V V V
1 1,2 1,3
Note : 1.All voltages are referenced to VSS = 0V 2.VIH (max) is acceptable 5.6V AC pulse width with 3ns of duration 3.VIL (min) is acceptable -2.0V AC pulse width with 3ns of duration
AC OPERATING CONDITION (TA=-40C ~ 85C, VDD=3.3 0.3V, VSS=0V)
Parameter Symbol Value Unit Note
AC Input High / Low Level Voltage Input Timing Measurement Reference Level Voltage Input Rise / Fall Time Output Timing Measurement Reference Level Output Load Capacitance for Access Time Measurement
VIH / VIL Vtrip tR / tF Voutref CL
2.4 / 0.4 1.4 1 1.4 50
V V ns V pF 1
Note : 1. Output load to measure access time is equivalent to two TTL gates and one capacitor (50pF) For details, refer to AC/DC output circuit
Rev.1.3 / Apr. 2003
4
HY57V561620B(L)T-I
CAPACITANCE (TA=25C, f=1MHz)
-6I/KI/HI Parameter Pin Symbol Min Max Min Max -8I/PI/SI Unit
Input capacitance
CLK A0 ~ A12, BA0, BA1, CKE, CS, RAS, CAS, WE, UDQM, LDQM
CI1 CI2 CI/O
2.5 2.5 4.0
3.5 3.8 6.5
2.5 2.5 4.0
4.0 5.0 6.5
pF pF pF
Data input / output capacitance
DQ0 ~ DQ15
OUTPUT LOAD CIRCUIT
Vtt=1.4V
RT=250
Output 50pF
Output
50pF
DC Output Load Circuit
AC Output Load Circuit
DC CHARACTERISTICS I (TA=-40C ~ 85C, VDD=3.30.3V)
Parameter Symbol Min. Max Unit Note
Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage
ILI ILO VOH VOL
-1 -1 2.4 -
1 1 0.4
uA uA V V
1 2 IOH = -4mA IOL = +4mA
Note : 1.VIN = 0 to 3.6V, All other pins are not tested under VIN =0V 2.DOUT is disabled, VOUT=0 to 3.6V
Rev.1.3 / Apr. 2003
5
HY57V561620B(L)T-I
DC CHARACTERISTICS II (TA=-40C ~ 85C, VDD=3.30.3V, VSS=0V)
Speed Parameter Symbol Test Condition -6I -KI
120
Unit -HI
120 2 mA 1
Note
-8I
120
-PI
110
-SI
110 mA 1
Operating Current Precharge Standby Current in Power Down Mode
IDD1 IDD2P IDD2PS IDD2N
Burst length=1, One bank active tRC tRC(min), IOL=0mA CKE VIL(max), tCK = 15ns CKE VIL(max), tCK = CKE VIH(min), CS VIH(min), tCK = 15ns Input signals are changed one time during 30ns. All other pins VDD-0.2V or 0.2V CKE VIH(min), tCK = Input signals are stable. CKE VIL(max), tCK = 15ns CKE VIL(max), tCK = CKE VIH(min), CS VIH(min), tCK = 15ns Input signals are changed one time during 30ns. All other pins VDD-0.2V or 0.2V CKE VIH(min), tCK = Input signals are stable. tCK tCK(min), IOL=0mA All banks active CL=3 CL=2
130
30 mA 15 5 mA 5
Precharge Standby Current in Non Power Down Mode IDD2NS Active Standby Current in Power Down Mode IDD3P IDD3PS IDD3N Active Standby Current in Non Power Down Mode IDD3NS Burst Mode Operating Current Auto Refresh Current Self Refresh Current
40 mA 30 150 140 240 130 140 220 130 140 220 3 1.5 130 140 200 110 120 200 110 mA 120 200 mA mA mA 2 3 4 1
IDD4 IDD5 IDD6
tRRC tRRC(min), All banks active CKE 0.2V
Note : 1.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open 2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II 3.HY57V561620BT-6I/KI/HI/8I/PI/SI 4.HY57V561620BLT-6I/KI/HI/8I/PI/SI
Rev.1.3 / Apr. 2003
6
HY57V561620B(L)T-I
AC CHARACTERISTICS I (AC operating conditions unless otherwise noted)
-6I Parameter Symbol Min System Clock Cycle Time CAS Latency = 3 CAS Latency = 2 tCK3 tCK2 tCHW tCLW tAC3 tAC2 tOH tDS tDH tAS tAH tCKS tCKH tCS tCH tOLZ tOHZ3 tOHZ2 6 1000 10 2.5 2.5 2.0 1.5 0.8 1.5 0.8 1.5 0.8 1.5 0.8 1 2.7 2.7 5.4 6 5.4 5.4 7.5 2.5 2.5 2.5 1.5 0.8 1.5 0.8 1.5 0.8 1.5 0.8 1 2.7 2.7 5.4 5.4 5.4 5.4 Max Min 7.5 1000 10 2.5 2.5 2.5 1.5 0.8 1.5 0.8 1.5 0.8 1.5 0.8 1 2.7 3 5.4 6 5.4 6 Max Min 7.5 1000 10 3 3 2.5 2 1 2 1 2 1 2 1 1 3 3 6 6 6 6 Max Min 8 1000 10 3 3 2.5 2 1 2 1 2 1 2 1 1 3 3 6 6 6 6 Max Min 10 1000 12 3 3 2.5 2 1 2 1 2 1 2 1 1 3 3 6 6 6 6 Max Min 10 1000 ns ns ns ns 2 CAS Latency = 2 ns ns ns ns ns ns ns ns ns ns ns ns ns 1 1 1 1 1 1 1 1 1 1 Max ns -KI -HI -8I -PI -SI Unit Note
Clock High Pulse Width Clock Low Pulse Width Access Time From Clock CAS Latency = 3
Data-Out Hold Time Data-Input Setup Time Data-Input Hold Time Address Setup Time Address Hold Time CKE Setup Time CKE Hold Time Command Setup Time Command Hold Time CLK to Data Output in Low-Z Time CLK to Data Output in High-Z Time CAS Latency = 3 CAS Latency = 2
Note : 1.Assume tR / tF (input rise and fall time ) is 1ns 2.Access times to be measured with input signals of 1v/ns edge rate
Rev.1.3 / Apr. 2003
7
HY57V561620B(L)T-I
AC CHARACTERISTICS II
-6I Parameter Symbol Min Operation RAS Cycle Time Auto Refresh RAS to CAS Delay RAS Active Time RAS Precharge Time RAS to RAS Bank Active Delay CAS to CAS Delay Write Command to Data-In Delay Data-In to Precharge Command Data-In to Active Command DQM to Data-Out Hi-Z DQM to Data-In Mask MRS to New Command Precharge to Data Output Hi-Z CAS Latency = 3 CAS Latency = 2 tRRC tRCD tRAS tRP tRRD tCCD tWTL tDPL tDAL tDQZ tDQM tMRD tPROZ3 tPROZ2 tPDE tSRE tREF 60 18 42 18 12 1 0 2 5 2 0 2 3 2 1 1 100K 64 60 15 45 15 15 1 0 2 5 2 0 2 3 2 1 1 100K 64 65 20 45 20 15 1 0 2 5 2 0 2 3 2 1 1 100K 64 68 20 48 20 16 1 0 2 5 2 0 2 3 2 1 1 100K 64 70 20 50 20 20 1 0 2 5 2 0 2 3 2 1 1 100K 64 70 20 50 20 20 1 0 2 5 2 0 2 3 2 1 1 100K 64 ns ns ns ns ns CLK CLK CLK CLK CLK CLK CLK CLK CLK CLK CLK ms 1 tRC 60 Max Min 60 Max Min 65 Max Min 68 Max Min 70 Max Min 70 Max ns -KI -HI -8I -PI -SI Unit Note
Power Down Exit Time Self Refresh Exit Time Refresh Time
Note :
1. A new command can be given tRRC after self refresh exit
Rev.1.3 / Apr. 2003
8
HY57V561620B(L)T-I
IBIS SPECIFICATION
IOH Characteristics (Pull-up)
Voltage (V) 3.45 3.3 3.0 2.6 2.4 2.0 1.8 1.65 1.5 1.4 1.0 0 0 -21.1 -34.1 -58.7 -67.3 -73 -77.9 -80.8 -88.6 -93 100MHz (Min) I(mA) 100MHz (Max) I(mA) -2.4 -27.3 -74.1 -129.2 -153.3 -197 -226.2 -248 -269.7 -284.3 -344.5 -502.4 -0.7 -7.5 -13.3 -27.5 -35.5 -41.1 -47.9 -52.4 -72.5 -93 66MHz (Min) I(mA)
66MHz and 100MHz Pull-up
0 0 -100 -200 I (mA) -300 -400 -500 -600 Voltage (V)
IOH Min (100MHz) IOH Min (66MHz) IOH Max (66 /100MHz)
0.5
1
1.5
2
2.5
3
3.5
IOL Characteristics (Pull-down)
Voltage (V) 0 0.4 0.65 0.85 1.0 1.4 1.5 1.65 1.8 1.95 3.0 3.45 100MHz (Min) I(mA) 0 27.5 41.8 51.6 58.0 70.7 72.9 75.4 77.0 77.6 80.3 81.4 100MHz (Max) I(mA) 0 70.2 107.5 133.8 151.2 187.7 194.4 202.5 208.6 212.0 219.6 222.6 66MHz (Min) I(mA) 0 17.7
66MHz and 100MHz Pull-down
250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 3 3.5 Voltage (V)
IOL Min (100MHz) IOL Min (66MHz) IOL Max (100MHz)
33.3 37.6 46.6 48.0 49.5 50.7 51.5 54.2 54.9
Rev.1.3 / Apr. 2003
I (mA)
26.9
9
HY57V561620B(L)T-I
DEVICE OPERATING OPTION TABLE
HY57V561620B(L)T-6I
CAS Latency 166MHz(6ns) 143MHz(7ns) 133MHz(7.5ns) tRCD tRAS tRC tRP tAC tOH
3CLKs 3CLKs 2CLKs
3CLKs 3CLKs 3CLKs
7CLKs 6CLKs 6CLKs
10CLKs 9CLKs 9CLKs
3CLKs 3CLKs 3CLKs
5.4ns 5.4ns 5.4ns
2.0ns 2.0ns 2.5ns
HY57V561620B(L)T-KI
CAS Latency 133MHz(7.5ns) 125MHz(8ns) 100MHz(10ns) tRCD tRAS tRC tRP tAC tOH
2CLKs 3CLKs 2CLKs
2CLKs 3CLKs 2CLKs
6CLKs 6CLKs 5CLKs
8CLKs 9CLKs 7CLKs
2CLKs 3CLKs 2CLKs
5.4ns 6ns 6ns
2.5ns 2.5ns 2.5ns
HY57V561620B(L)T-HI
CAS Latency 133MHz(7.5ns) 125MHz(8ns) 100MHz(10ns) tRCD tRAS tRC tRP tAC tOH
3CLKs 3CLKs 2CLKs
3CLKs 3CLKs 2CLKs
6CLKs 6CLKs 5CLKs
9CLKs 9CLKs 7CLKs
3CLKs 3CLKs 2CLKs
5.4ns 6ns 6ns
2.5ns 2.5ns 2.5ns
HY57V561620B(L)T-8I
CAS Latency 125MHz(8ns) 100MHz(10ns) 83MHz(12ns) tRCD tRAS tRC tRP tAC tOH
3CLKs 2CLKs 2CLKs
3CLKs 2CLKs 2CLKs
6CLKs 5CLKs 4CLKs
9CLKs 7CLKs 6CLKs
3CLKs 2CLKs 2CLKs
6ns 6ns 6ns
2.5ns 2.5ns 2.5ns
HY57V561620B(L)T-PI
CAS Latency 100MHz(10ns) 83MHz(12ns) 66MHz(15ns) tRCD tRAS tRC tRP tAC tOH
2CLKs 2CLKs 2CLKs
2CLKs 2CLKs 2CLKs
5CLKs 5CLKs 4CLKs
7CLKs 7CLKs 6CLKs
2CLKs 2CLKs 2CLKs
6ns 6ns 6ns
2.5ns 2.5ns 2.5ns
HY57V561620B(L)T-SI
CAS Latency 100MHz(10ns) 83MHz(12ns) 66MHz(15ns) tRCD tRAS tRC tRP tAC tOH
3CLKs 2CLKs 2CLKs
2CLKs 2CLKs 2CLKs
5CLKs 5CLKs 4CLKs
7CLKs 7CLKs 6CLKs
2CLKs 2CLKs 2CLKs
6ns 6ns 6ns
2.5ns 2.5ns 2.5ns
Rev.1.3 / Apr. 2003
10
HY57V561620B(L)T-I
COMMAND TRUTH TABLE
Command CKEn-1 CKEn CS RAS CAS WE DQM
ADDR
A10/ AP
BA
Note
Mode Register Set No Operation Bank Active Read
H H H H
X X
L H L
L X H L H
L X H H L
L X
X X
OP code X RA L CA H L V V
H H H X X
X X
L L
Read with Autoprecharge Write H Write with Autoprecharge Precharge All Banks H Precharge selected Bank Burst Stop DQM Auto Refresh Burst-Read-SingleWRITE Entry Self Refresh1 Exit H H H H H L H X L H L H Entry Precharge power down Exit L H L H Clock Suspend Entry Exit H L L L H V X V V X H X H X H X X H L L H H X H X H X X H X H X H X X L L L H X L H X L L L X L L L X H H H X X H L X V X X X X L L H L X X X L H L L X CA
V H H L X X X X V
A9 Pin High (Other Pins OP code)
X
X
X
Note : 1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high 2. X = Dont care, H = Logic High, L = Logic Low. BA =Bank Address, RA = Row Address, CA = Column Address, Opcode = Operand Code, NOP = No Operation
Rev.1.3 / Apr. 2003
11
HY57V561620B(L)T-I
PACKAGE INFORMATION
400mil 54pin Thin Small Outline Package
UNIT : mm(inch)
11.938(0.4700) 11.735(0.4620) 22.327(0.8790) 22.149(0.8720) 0.150(0.0059) 0.050(0.0020) 10.262(0.4040) 10.058(0.3960) 1.194(0.0470) 0.991(0.0390)
0.80(0.0315)BSC
0.400(0.016) 0.300(0.012)
5deg 0deg
0.597(0.0235) 0.406(0.0160)
0.210(0.0083) 0.120(0.0047)
Rev.1.3 / Apr. 2003
12

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